RPM-075PT sensors 1/2 phototransistor, surface mount type RPM-075PT quite new phototransistor which peak sensitivity is designed as same level as human eye. best sensor to detect illuminance. (peak sensitivity is 600nm.) small and light weight package which can be used for reflow soldering and pd free soldering. ! ! ! ! application control of lighting cellular phones, lcd displays, etc. control of strobe. (dsc, camcorder, etc.) ! ! ! ! features 1) best sensor to detect illuminance. (peak sensitivity is 600nm.) 2) small (2125) and light weight package (3mg) which can be used for reflow soldering and pd free soldering. 3) linear against wide range of illuminance from a few lx to 10000lx over. 4) use si good for an environ ment. (not cds) ! ! ! ! external dimensions (units : mm) 1.2 0.25 0.8 1.25 2.0 + 0.2 ? 0 1.4 (0.15) emitter mark unspecified tolerance shall be 0.1 1 2 1 2 emitter collector ! ! ! ! absolute maximum ratings (ta=25 c) collector-emitter voltage emitter-collector voltage collector current collector power dissipation operating temperature storage temperature parameter symbol v ceo v eco i c p c topr tstg limits 20 5 10 50 ? 30 + 85 ? 40 + 100 unit v v ma mw ?c ?c ! ! ! ! electrical and optical characteristics (ta=25 c) dark current light current peak sensitivity wavelength collector-emitter saturation voltage response time half-angle parameter symbol i c i ceo p v ce (sat) 1/2 tr tf min. 0.25 ? ? ? ? ? typ. 0.4 ? 600 ? 60 10 max. 0.6 0.5 ? 0.4 ? ? unit ma v ce = 5v, e = 500lx v ce = 10v (black box) ? i c = 0.1ma, e = 500lx ? v cc = 5v, i c = 1ma, r l = 100 ? a nm v deg s conditions
RPM-075PT sensors 2/2 ! ! ! ! electrical and optical characteristic curves collector current : i c (ma) illuminance : e (lx) fig.1 collector current-illuminance 250 500 0 750 1000 1250 0.2 0.4 0.6 0.8 1 0 1.2 1.6 1.4 v ce =5v collector current : i c (ma) collector-emitter voltage : v ce (v) fig.2 output characteristics 12 0345 0.5 0 1 e=250lx e=500lx e=750lx e=1000lx relative collector current : i c (%) ambient temperature : ta ( c) fig.3 relative output-ambient temperature ? 25 ? 50 0 25 50 75 100 1 10 100 1000 dark current : i ceo (na) ambient temperature : ta ( c) fig.4 dark current-ambient temperature ? 25 ? 50 0 25 50 75 100 0.01 0.1 1 10 1000 100 10000 v ce =10v v ce =20v v ce =30v relative sensitivityt : i c (%) optical wavelength : (nm) fig.7 spectral sensitivity characteristics 500 600 700 400 800 900 1000 1100 20 40 60 80 0 120 100 collector dissipation : p c (mw) ambient temperature : ta ( c) fig.6 collector dissipation -ambient temperature 025 ? 25 50 75 100 20 40 60 80 0 120 100 response time : tr ( s) collector current : i c (ma) fig.7 response time-collector current 0.01 0.1 1 0.001 10 100 100 1000 1000 r l =100k ? r l =50k ? r l =20k ? r l =1k ? ta=25c v cc =5v relative emitting strength (%) angular displacement : (deg) fig.8 directional pattern ? 60 ? 30 0 ? 90 30 60 90 20 30 10 40 50 60 70 80 90 0 100 relative emitting strength (%) angular displacement : (deg) fig.9 directional pattern ? 60 ? 30 0 ? 90 30 60 90 20 30 10 40 50 60 70 80 90 0 100
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